M58LR128KB85ZB5

SUMMARY DESCRIPTION

The M58LW032 is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non- burst Flash memory.

FEATURES SUMMARY

■ WIDE x16 DATA BUS for HIGH BANDWIDTH
■ SUPPLY VOLTAGE
– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
– VDDQ = 1.8V to VDD for I/O Buffers
■ SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Asynchronous Random Read
– Asynchronous Address Latch Controlled Read
– Page Read
■ ACCESS TIME
– Synchronous Burst Read up to 56MHz
– Asynchronous Page Mode Read 90/25ns and 110/25ns
– Random Read 90ns, 110ns.
■ PROGRAMMING TIME
– 16 Word Write Buffer
– 18µs Word effective programming time
■ 64 UNIFORM 32 KWord MEMORY BLOCKS
■ BLOCK PROTECTION/ UNPROTECTION
■ PROGRAM and ERASE SUSPEND
■ 128 bit PROTECTION REGISTER
■ COMMON FLASH INTERFACE
■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW032A: 8816h