DW8711-UDMHHT

Summary description

The M69KB096AB is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by 16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-per-cell topology that achieves bigger array sizes. It provides a high-density solution for low-power handheld applications.
The M69KB096AB is supplied by a 1.7 to 1.95V supply voltage range.

Features summary

■ Supply Voltage
– VCC = 1.7 to 1.95V core supply voltage
– VCCQ = 1.7 to 1.95V for I/O buffers
■ User-selectable Operating Modes
– Asynchronous Modes: Random Read, and Write, Page Read
– Synchronous Modes: NOR-Flash, Full Synchronous (Burst Read and Write)
■ Asynchronous Random Read
– Access Time: 70ns
■ Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
■ Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or Continuous
– Maximum Clock Frequency: 104MHz
– Output delay: 7ns at 104MHz
■ Low Power Consumption
– Active Current: < 25mA
– Standby Current: 140µA
– Deep Power-Down Current: < 10µA
■ Low Power Features
– Partial Array Self-Refresh (PASR)
– Deep Power-Down (DPD) Mode
– Automatic Temperature-compensated SelfRefresh
■ Operating Temperature
– –30°C to +85°C