ENFVZ4Q48

General Description

The SA25F005 is a 512Kb (256K X 2) CMOS non-volatile serial Flash Memory. This device fully conforms to the SPI 4-wire protocol, is enabled through the Chip Select (CSb) pin, and uses Clock (SCK), Data-in (SI) and Data-out (SO) pins to synchronously control data transfer between the SPI microcontroller and the Serial FLASH memory.
The memory can be programmed from 1 up to 256 bytes at a time via the Page Program (PP) instruction.
The memory is organized into two sectors. Each sector contains 128 pages, with each page being 256 bytes wide. The entire memory can therefore be viewed as consisting of 256 pages, or 65,536 bytes.
The memory can be erased in one of the following ways:
• 256 bytes at a time, using the Page Erase (PE) instruction
• 256 Kb at a time, using the Sector Erase (SE) instruction
• 512 Kb at a time, using the Bulk Erase (BE) instruction

Features
• Saifun NROM™ Flash Cell
• Serial Peripheral Interface (SPI) Compatible, Supports SPI Modes 0 (0,0) and 3 (1,1)
• Page Program Operation:
– 256 pages (256 Bytes/Page)
– Single Page Rewrite Cycle (Erase and Program) in 10ms Typical
• Page Program Mode (up to 256 bytes) in 9ms Typical
• Page Erase (256 bytes) in 3 ms
• Sector Erase (256 Kb) in 0.3 s
• Bulk Erase (512 Kb)
• Single Supply Voltage: 2.7 V to 3.6 V
• 25MHz Clock Rate
• Block Write Protection: Protect Quarter, Half or Entire Array
• Write Protect Pin and Write Disable Instructions of Both Hardware and Software Data Protection
• 100,000 Erase Cycles (Minimum)
• More than 20-Year Data Retention
• Low-power Standby Current (less than 1µA)
• 8-SOIC Narrow Package
• MLF Leadless Package
• Temperature Range:
– Industrial: -40°C to +85°C
– Commercial: 0°C to +70°C