IW2201

General Description

The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb deviceorganized as 4,194,304 words or 8,388,608 bytes.

Distinctive Characteristics

Architectural Advantages
„Single power supply operation
– 3-Volt read, erase, and program operations
„Manufactured on 200 nm MirrorBit process technology
„Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
– May be programmed and locked at the factory or by the customer „Flexible sector architecture
– 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors
– 64 Mb (boot sector models): 127 32 Kword (64 KB) sectors
+ 8 4Kword (8KB) boot sectors
– 32 Mb (uniform sector models): 64 32Kword (64 KB) sectors
– 32 Mb (boot sector models): 63 32Kword (64 KB) sectors
+ 8 4Kword (8KB) boot sectors
– 16 Mb (boot sector models): 31 31Kword (64 KB) sectors
+ 8 4Kword (8 KB) boot sectors
„Compatibility with JEDEC standards
– Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection „
100,000 erase cycles typical per sector
„20-year data retention typical

Performance Characteristics
„High performance
– 90 ns access time
– 4-word/8-byte page read buffer
– 25 ns page read times
– 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates
„Low power consumption (typical values at 3.0 V, 5 MHz)
– 18 mA typical active read current
– 50 mA typical erase/program current
– 1 µA typical standby mode current
„Package options
– 48-pin TSOP
– 56-pin TSOP
– 64-ball Fortified BGA
– 48-ball fine-pitch BGA
– 56-ball fine pitch BGA (MCP-compatible for cellular handsets)