M29W400DB70ZE6E

DESCRIPTION

The M29W400 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby- Wordbasis using onlya single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

**■ M29W400T and M29W400B are replaced respectivelyby the M29W400BT and

M29W400BB**

■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 90ns
■ FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
■ MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
■ 100,000PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29W400T: 00EEh
– Device Code, M29W400B: 00EFh