BLF872

General description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features

■ Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
◆ Peak envelope power load power PL(PEP) = 300 W
◆ Gain Gp = 15 dB
◆ Drain efficiency ηD = 43 %
◆ Third order intermodulation distortion IMD3 = −28 dBc
■ Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A:
◆ Average output power PL(AV) = 70 W
◆ Gain Gp = 15 dB
◆ Drain efficiency ηD = 30 %
◆ Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency)
■ Advanced flange material for optimum thermal behavior and reliability
■ Excellent ruggedness
■ High power gain
■ Designed for broadband operation (UHF band)
■ Excellent reliability
■ Internal input and output matching for high gain and optimum broadband operation
■ Source on underside eliminates DC isolators, reducing common-mode inductance
■ Easy power control

Applications

■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band