Description

The SI7308DN-T1-GE3 is a high-performance MOSFET transistor that belongs to the SI7308DN series produced by Vishay. It is designed with an advanced process technology and features low ON-resistance, fast switching speed, low gate charge, and low threshold voltage. It is suitable for high-speed switching applications with a high power-density requirement. This MOSFET transistor is packaged in a compact and environment-friendly 100% lead-free SOT-23-3 package.

Specifications and features

• Manufacturer: Vishay
• Product Category: Field Effect Tube (MOSFET)
• Number of Channels: 1 Channel
• Vds: 30 V
• Id - Continuous Drain Current: 4.5 A
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 3.6A, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
• Power - Max: 1.35W
• Package / Case: SOT-23-3

Application Scenarios

The SI7308DN-T1-GE3 MOSFET transistor is commonly used in a variety of electronics devices and systems where a high-speed switching application with low power dissipation is required. It can be used in portable devices, such as smartphones, tablets, and laptops, as well as in motor control systems, LED lighting, power management, and other applications that require high efficiency and performance.

Comparison

• Low ON-resistance
• Fast switching speed
• Low gate charge
• Compact and environment-friendly package

• Maximum Vds is only 30V, which limits its applications in some high voltage environments.
• Maximum continuous drain current is 4.5A, which limits its applications in some high current environments.