Description

The SI2356DS-T1-GE3 is a Field Effect Tube, also known as MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a high-quality electronic component that can be used in various applications. MOSFETs are widely used in electronic circuits due to their high input impedance, low power consumption, and fast switching speed, making them suitable for various applications such as power amplification, switching mode power supply, audio amplification, and many more.

Specifications and features

• Drain-Source Voltage (Vdss): 20 V
• Continuous Drain Current (Id) @ 25°C: 1.7 A
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 1.6 A, 4.5 V
• Vgs(th) (Max) @ Id: 750 mV @ 250 µA
• Gate Charge (Qg) @ Vgs: 3.1 nC @ 4.5 V
• Input Capacitance (Ciss) @ Vds: 180 pF @ 10 V
• Power - Max: 1.3 W

Application Scenarios

The SI2356DS-T1-GE3 Field Effect Tube is widely used in various applications such as:

• Power Amplification
• Switching Mode Power Supply (SMPS)
• Audio Amplification
• DC-DC Converters
• Voltage Regulators
• Motor Control

Comparison

• Low power consumption
• Fast switching speed
• High input impedance
• High gain
• Low noise

• May require additional components for circuit protection and stability
• May not be suitable for high power applications
• May require proper heat-sinking to prevent thermal breakdown