EM6AB160TSA-5IG

Overview

The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 128 Mbits. It is internally configured as a quad 1M x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK).

Features
• Fast clock rate: 350/333/300/285/250/200 MHz
• Differential Clock CK & CK# input
• 4 Bi-directional DQS. Data transactions on both
edges of DQS (1DQS / Byte)
• DLL aligns DQ and DQS transitions
• Edge aligned data & DQS output
• Center aligned data & DQS input
• 4 internal banks, 1M x 32-bit for each bank
• Programmable mode and extended mode registers
- CAS# Latency: 3, 4, 5
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleave
• Full page burst length for sequential type only
• Start address of full page burst should be even
• All inputs except DQ’s & DM are at the positive
edge of the system clock
• No Write-Interrupted by Read function
• 4 individual DM control for write masking only
• Auto Refresh and Self Refresh
• 4096 refresh cycles / 32ms
• Power supplies up to 350/333/300/285MHz:
VDD = 2.8V ± 5%
VDDQ = 2.8V ± 5%
• Power supplies up to 250/200MHz:
VDD = 2.5V ± 5%
VDDQ = 2.5V ± 5%
• Interface : SSTL_2 I/O compatible
• Standard 144-ball FBGA package